digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2N6167-2n6170 silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak forward and reverse blocking voltage (1) (t j = -40 to 100c) 2N6167 2n6168 2n6169 2n6170 v drm v rrm 100 200 400 600 volts peak non-repetitive reverse blocking voltage (t 5ms) 2N6167 2n6168 2n6169 2n6170 v rsm 150 250 450 650 volts average forward current (t c = -40 to +65c) (85c) i t(av) 13 6.5 amps peak surge current (1 cycle, 60hz, t c = 65c) (1.5ms pulse @ t j = 100c) preceded and followed by no current or voltage i tsm 240 560 amps circuit fusing (t j = -40 to +100c, t = 8.3ms) i 2 t 235 a 2 s peak gate power p gm 5 watts average gate power p g(av) 0.5 watts forward peak gate current i gm 2 amps operating junction temperature range t j -40 to 100 c storage temperature range t stg -40 to 150 c stud torque 30 in. lb. note 1: ratings apply for zero or negative gate voltage. device s shall not have a positive bias applied to the gate concurrentl y with a negative potential on the an ode. devices should not be tested with a constant source fo r forward or reverse blocking capability such that the voltage applied exceeds the rated blocking volt age. thermal characteristics characteristic symbol max unit thermal resistance, junction to case r ? jc 1.5 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (rated v drm or v rrm , gate open, t c = 100c) 2N6167 2n6168 2n6169 2n6170 (rated v drm or v rrm , gate open, t c = 25c) all devices i drm , i rrm - - - - - 1 1 1 1 - 2.0 2.5 3.0 4.0 10 ma ma ma ma a peak forward on-state voltage (i tm = 41a peak) v tm - 1.5 1.7 volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130128
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2N6167-2n6170 silicon controlled rectifiers characteristic symbol min typ max unit gate trigger current (continuous dc) (v d = 12vdc, r l = 24? ) t c = -40c t c = 25c i gt - - - 2.1 75 40 ma gate trigger voltage (continuous dc) (v d = 12vdc, r l = 24? ) t c = -40c t c = 25c v gt - - 0.8 0.63 2.5 1.6 volts holding current (v d = 12vdc, gate open, i t = 200ma) t c = -40c t c = 25c i h - - - 3.5 90 50 ma turn-on time (i tm = 41a, v d = rated v drm, i gt = 200ma , rise time 0.05s, pulse width = 10s) t on - - 1 s turn-off time (i tm = 10a, i r = 10a) (i tm = 10a, i r = 10a, t j = 100c) t off - - 25 40 - - s forward voltage application rate (t j = 100c, v d = rated v drm ) dv/dt - 50 - v/s mechanical characteristics case to-48 marking alpha-numeric pin out see below to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130128
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